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multiple patterning
Multiple patterning (or multi-patterning) is a class of technologies for manufacturing integrated circuits (ICs), developed for photolithography to enhance the feature density. The simplest case of multiple patterning is double patterning, where a conventional lithography process is enhanced to produce double the expected number of features. The resolution of a photoresist pattern begins to blur at around 45 nm half-pitch.〔T. Honda ''et al.'', J. Microlith., Microfab., Microsyst., Vol. 5, 043004 (2006).〕 For the semiconductor industry, therefore, double patterning was introduced for the 32 nm half-pitch node and below, mainly using state-of-the-art 193 nm immersion lithography tools.
There are several types of double patterning. In combination, these may be used for multiple patterning.〔C. Fonseca ''et al.'', Proc. SPIE vol. 7274, 72740I (2009).〕
==Dual-tone photoresist==
Dual-tone photoresists have been developed years ago, allowing the printing of two lines in a single exposure imaging of a single line. Early demonstrations relied on crosslinking of the highest dose regions, rendering them insoluble in developer, while the lowest dose regions were normally insoluble already.〔U. S. Patent 6114082.〕 Alternatively, a photobase generator may generate acid quenchers at high doses; the acid quenching counters their ability to render the photoresist soluble.〔S. Song ''et al.'', Polymers for Adv. Tech. 9, 326-333 (1998).〕〔X. Gu ''et al.'', J. Photopoly. Sci. & Tech. 22, 773-781 (2009).〕 The simplicity and cost-effectiveness of this approach make it compelling as a method of extending current photolithographic capability. However, due to its inherent edge-printing characteristic, loops will generally be formed, which will need to be addressed by other process steps. In addition, the expected acid or base diffusion may limit the resolution of this technique.
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
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